mm-Wave AlGaN/GaN HFET's
Final rept. 1 Oct 2001-31 Jan 2003
VIRGINIA POLYTECHNIC INST AND STATE UNIV BLACKSBURG DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Pagination or Media Count:
AIGaNGaN HFETs demonstrate considerable promise for advanced RF power sources for communications and radar systems. Experimental HFET devices have produced RF output power on the order of 10-12 Wmm of gate periphery at frequencies up to X-band. However, as frequency is increased to the mm-wave region RF performance significantly degrades. There are a variety of physical effects that currently limit the high frequency performance of these devices. In particular, it is proposed that charge non-confinement in the conducting channel of these devices can produce space charge and related effects that limit the performance of the HFETs. This project investigates charge non-confinement phenomena and develops an analytic channel charge model that can be used in a comprehensive HFET model for use in large-signal RF circuit simulators.
- Electrical and Electronic Equipment