Accession Number:

ADA415944

Title:

Radiation Tolerant Embedded Memory

Descriptive Note:

Final rept. 19 Dec 2002-19 Jun 2003

Corporate Author:

PICODYNE CORP ANNAPOLIS MD

Personal Author(s):

Report Date:

2003-06-19

Pagination or Media Count:

26.0

Abstract:

Report Developed under SBIR contract for topic MDA02-021. PicoDyne has developed Ultra-Low-PowerULP CMOS design techniques and processes, and combined them with Radiation Hardened By Design methodologies to form its Cool-RADtm process. Complex ULP and Cool- RADtm parts have been built, including data compression devices, Reed-Solomon Encoders and Decoders, and digital signal processors. Memory blocks have been embedded in ULP chips. Radiation Tolerant Memory presents new challenges to the chip designer. During the course of this SBIR, PicoDyne developed a memory architecture for use in Cool-RADtm parts. We started with a small memory cell pair that is insensitive to single event effects, and will scale to smaller geometries to provide the same performance. we then designed arrays of that memory to build up blocks to be used in complex Cool-RADtm parts such as microprocessors and digital signal processors.

Subject Categories:

  • Electrical and Electronic Equipment
  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE