Controlled Nucleation and Growth in Semiconductor Epitaxy
Final rept. 1 Sep 2002-31 May 2003
NANO DYNAMICS INC NEW YORK
Pagination or Media Count:
During Phase 1 support two types of ultrasonic transducers were designed and fabricated. These transducers were utilized for ultrasonically assisted deposition of silicon under Molecular Beam Epitaxy MBE. Epitaxial Si growth on 100 Si wafers has been observed at reduced substrate heater temperatures when accompanied by simultaneous ultrasonic agitation of the substrate during deposition.
- Atomic and Molecular Physics and Spectroscopy