Accession Number:

ADA415646

Title:

AFRL/GaAsTek Heterojunction Bipolar Transistor (HBT) Process Development

Descriptive Note:

Final rept. 1 Mar-1 Sep 1999

Corporate Author:

AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIRECTORATE

Personal Author(s):

Report Date:

2001-10-01

Pagination or Media Count:

5.0

Abstract:

A CRDA was established between Aerospa9e Components and Subsystem Division AFRLSND and ITT GaAsTek to transfer the design, manufacture, and development of the Air Forces thermally shunted HBT TSHBT process to GaAsTek and to co-develop, design, and fabricate novel power amplifiers using GaAsTeks Process 5 MMIC foundry. GaAsTek was a well-known DoD MMIC foundry for high-power x-band amplifiers utilizing MESFET technology. AFRLSND was known for developing a TSHBT capability for high power density devices. By working together, plans were made to transfer the TSHBT technology to GaAsTek. The Air Force was to benefit from this transfer by having a reputable DoD foundry be capable of manufacturing high-power amplifiers for Air Force system integration. Another added benefit would be having Air Force circuit designers work with a foundry to design and process novel power amplifiers for future Air Force system needs. GaAsTek was to benefit by gaining a new device capability, which could be used for commercial as well as military markets.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE