Accession Number:

ADA415295

Title:

Journal of Crystal Growth Volume 246, Nos. 1-2, pp.1-176, December 2002

Descriptive Note:

Semimonthly rept.

Corporate Author:

ELSEVIER SCIENCE PUBLISHERS AMSTERDAM (NETHERLANDS)

Report Date:

2002-12-01

Pagination or Media Count:

187.0

Abstract:

Partial Contents Classical semiconductors. Temperature control in InGaAs-based quantum well Structures grown by molecular beam epitaxy on GaAs 100 and GaAs 111B substrates Atomic depth distribution and growth modes of Sn on Si1111 41-In and alpha-33-Au surfaces at room temperature Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum Defect-selective etching of GaN in a modified molten bases system N-type doping behavior of Al0.15Ga0.85NSi with various Si incorporations On mass transport and surface morphology of sublimation grown 4H silicon carbide A global thermal analysis of multizone resistance furnaces with specular and diffuse samples The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy A new phenomenon in the floating-zone FZ growth of Si nanowires Structural characterization of epitaxial lateral overgrown GaN on patterned GaNGaAs001 substrates Temperature dependence of stresses in GaNAlN6H SiC0001 structures correlation between AlN buffer thickness and intrinsic stresses in GaN Crystal structure and ferroelectricity of nanocrystalline barium titanate thin films Preparation of high quality anthracene crystals using double run selective self-seeding vertical Bridgman technique DRSSVBT Relationships between DTA and DIL characteristics of nano-sized alumina powders during 0- to alpha-phase transformation Characteristics and crystal structure of the BaZrx Ti1-xO3 thin films deposited by RF magnetron sputtering.

Subject Categories:

  • Crystallography
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE