Accession Number:

ADA415178

Title:

Material Issues in Uncooled Ferroelectric Infrared Detectors

Descriptive Note:

Final rept. 1 Jul 2001-30 Sep 2002

Corporate Author:

KANSAS UNIV CENTER FOR RESEARCH INC LAWRENCE

Personal Author(s):

Report Date:

2003-03-01

Pagination or Media Count:

8.0

Abstract:

The overall goal of this 12-month project was to explore ion beam assisted growth of uncooled ferroelectric thin film infrared detectors so as to improve the material properties and thus device performance of thin film ferroelectric TFFE infrared imaging componentssystems. Two issues were addressed. One is to optimize physical properties of the ferroelectric layer, aiming at Improving sensitivity and reducing noise of these devices. The other is to grow the whole multilayered TFFE at a low thermal budget below 500 C, which is required for a monolithic TFFE on Si-based readout integrated circuits. ion beam assisted deposition IBAD was employed in this research as it can preferentially generate a textured growth pattern, and provide atoms with extra kinetic energies, promoting formation of high-quality oriented ferroelectric films at low substrate temperature. During the project period, two vacuum systems were constructedmodified for the proposed research. One was addition of ion beam to our existing pulsed laser deposition system for ion beam assisted deposition IBAD-PLD and the other was the new thermale-beam co-evaporator equipped with IBAD and high-resolution electron diffraction capabilities IBAD-TEC. Growth of samples was conducted on both systems and the experimental results are summarized in the report.

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE