Quantum Transport, Magnetic Field Sensor, an Integrated Amplification in no el Si/SiGe Heterostrtucture Devices
Rept. for 1 Jan 1998-31 Dec 2001
NORTH CAROLINA UNIV AT CHAPEL HILL
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Studies of high mobility SiSiGe heterostructure devices have been analyzed in light of correlations among carriers. Single-particle models fail to describe the metal-insulator transitions observed in them. Attempts to confine the carriers and create lateral tunneling structures and magnetic field sensors have revealed ambiguous results that cannot be distinguished from disorder in the devices but which show some promise for device applications.
- Electricity and Magnetism
- Quantum Theory and Relativity