Ultra High Speed Heterojunction Bipolar Transistor Technology
CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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Scaling of HBTs for high circuit bandwidth and high current gain f sub tau and power gain f max cutoff frequencies is summarized. Key bandwidth limits include scaling of the collector-base junction, the emitter Ohmic contact resistivity and greatly increased current density. Substrate transfer processes allow submicron collector sealing, and have produced HBTs with 20 dB power gain at 100 GHz. 295 GHz f sub tau has been obtained. Key to continued progress is improvement of emitter contacts and reliable operation at approximately 10 to the 6th power Amperescm2 current density.
- Electrical and Electronic Equipment
- Radiofrequency Wave Propagation