SiGe Intersubband Detectors for Terahertz Communication and Sensing
Final rept. 15 Nov 2000-14 May 2002
DELAWARE UNIV NEWARK DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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We report on the design and fabrication of THz detectors based on silicon germanium nanostructures grown by MBE to obtain intersubband transitions in the energy range from 4.1 meV to 4.1 meV 1 to 10 THz. The absorption and photoresponse was characterized by Fourier Transform Infrared Spectroscopy FTIR, and simulated using a 6 band kp band structure calculation. A multistep SiGe quantum well structure was designed and fabricated to have transitions between two heavy hole HH states. The best device, SGC 439, had an absorption spectrum that agreed reasonably with the photocurrent spectrum and showed response peaks at 280 and 360cm 8.4 THz and 10.8 THz with the sample temperature at 77 K. It is concluded that SiGe quantum well devices are feasible as THz detectors.
- Infrared Detection and Detectors
- Quantum Theory and Relativity