VCSEL and Smart Pixel Research for VLSI Photonics
Final rept. 15 May 1998-20 Dec 2002
ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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The goal of this research program is to develop smart pixels and related technology for VLSI photonic systems. The native oxide and tunneling contact technology developed at the University of Illinois is the enabling technology for high performance vertical cavity surface emitting lasers VCSELs which will be used in future photonic systems and specifically in the smart pixels that are the focus of this research program. The smart pixel 8 x 8 2.5 Gbs and 2 x 2 20 Gbs arrays that will be studied will operate at 670 nm or 1330 nm and will utilize the native oxide defined VCSELs with tunnel junction contacts and heterogeneous materials integration through direct-wafer fusion, epitaxial lift-off, and bumpbonding techniques for integration and packaging. The University of Illinois and the University of Texas 20 GHz and the Vitesse GaAs ED MESFETMSM technology utilizing the MOSIS foundry 2.5 GHz.
- Electrical and Electronic Equipment
- Lasers and Masers
- Electrooptical and Optoelectronic Devices