Accession Number:

ADA413407

Title:

Processing Technologies for Al(x)Ga(1-x)N Photodetector Arrays

Descriptive Note:

Final rept. 15 Apr 1999-14 Oct 2002

Corporate Author:

ILLINOIS UNIV CHAMPAIGN GRANTS AND CONTRACTS ADMINISTRATION

Personal Author(s):

Report Date:

2002-10-01

Pagination or Media Count:

92.0

Abstract:

Processing technologies for AlxGa1-xN have been developed. Inductively-coupled-plasma reactive ion etching ICP-RIE is shown to be capable of etching AlGaN materials at high etch rates and high anisotropy Plasma-induced damage in n-GaN is shown to depend mainly on the ion energy to which samples are exposed during ICP-RIE The damage can be annealed at 700 degrees C with samples recovering to their unetched states. Photoelectrochemical etching of n-GaN is shown to be useful for material characterization and this process may be exploited as a rapid method for quantification of defects in GaN Auger analysis and x-ray photoelectron spectroscopy have been utilized for studying the cleaning of AlxGa1-xN surfaces it is shown that buffered oxide etch is more effective in removing surface adventitious oxides of AlxGa1-xN than ammonium hydroxide and hydrochloric acid. Schottky contacts on AlxGa1-xN for various metals have been characterized. The barrier heights depend on metal work function which may show that AlxGa1-xN surfaces are not completely dominated by surface states. Low contact ohmic resistances were achieved on p-GaN and p- AlxGa1-xN GaN superlattices using TiPtAu metallization. TiAlMoAu metallization was developed as a robust ohmic contact metallization for n- AlxGa1-xN with x up to 0.6.

Subject Categories:

  • Inorganic Chemistry
  • Optical Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE