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Investigation of the Quantum 1/f Effect and of other Fluctuations in the Radiation-Hardening of Multiple-Satellite Systems

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Final technical rept. 15 May 2000-14 Feb 2003

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The authors quantum 1f noise formulas were used for the first time here to calculate from first principles analytically, and to graph as a function of the absorbed dose, the radiation-induced 1f noise increase injunction- type devices, such as junction-based photodetectors, BJTs, HBTs, mixers, etc. The same is done also for FET-type devices, such as FETs, or HFETs, yielding even a reduction of the equilibrium 1f noise expected in high-mobility semiconductors for low radiation dose, and favoring them for radiation hardening. The same theory was adapted and used here for the first time to derive simple engineering formulas for the quantum 1f effect in the radiation resistance of antennas from first principles. This allows for the optimization of the directivity of antenna arrays or of the response from multiple satellite systems in space. The same formulas were adapted and used here for the first time to derive analytical engineering formulas allowing for the quantum 1f optimization of GaNAlGaN HFETs, RTDs, biological and chemical resonant BAW and SAW quartz sensors, various silicon MEMS resonators, all types of spintronic devices, cavity resonators, nano-devices and bent ultra-thin semiconductor devices. This allows optimizing all these devices and systems for ultra-low 1f noise and system phase noise, with staggering impact on major DOD instrumentation performance.

Subject Categories:

  • Infrared Detection and Detectors
  • Quantum Theory and Relativity
  • Solid State Physics

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