Accession Number:

ADA413135

Title:

Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications

Descriptive Note:

Final technical rept. 1 Jul 1999-30 Jun 2002

Corporate Author:

PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL AND COMPUTER ENGINERING

Personal Author(s):

Report Date:

2003-03-31

Pagination or Media Count:

16.0

Abstract:

Homojunction bipolar transistors BJTs have been designed, fabricated, and characterized in 4H-SiC Devices optimized for high current gain have betas as high as 55, a new record for SiC BJTs. Devices optimized for blocking voltage exhibit blocking voltages of 3,200 V, again a new record for SiC BJTs. For the high-gain devices, the critical parameter is the base doping, which must be high enough to prevent punchthrough, while low enough to achieve a high emitter injection efficiency. The optimum value in these devices is a doping of about 1xl017 cm3 at a base thickness of 1 micron. Another critical parameter is the lateral spacing between the edge of the emitter and the implanted P region used to form the base contact.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE