Accession Number:

ADA413131

Title:

Investigation of Jet Vapor Deposited (JVD) Silicon Oxide/Nitride/Oxide (ONO) Films as Gate Dielectrics for SiC and GaN Devices

Descriptive Note:

Final technical rept. 1 Jul 2000-30 Jun 2001

Corporate Author:

PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL AND COMPUTER ENGINERING

Personal Author(s):

Report Date:

2003-03-31

Pagination or Media Count:

14.0

Abstract:

Jet vapor deposited JVD silicon dioxide-nitride-dioxide ONO films are investigated as gate dielectrics for SiC MOS transistors and GaN high-electron-mobility transistors HEMTs. The JVD process employs supersonic jets of a light carrier gas such as helium to transport depositing vapor from the source to the substrate. The high impact energies of the depositing species allow the use of room-temperature substrate, which contributes to improved film quality.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE