Accession Number:

ADA413035

Title:

Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING AND MANAGEMENT/DEPT OF ENGINEERING PHYSICS

Personal Author(s):

Report Date:

2003-03-01

Pagination or Media Count:

63.0

Abstract:

Recently, research on the wide bandgap semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and SiN implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.

Subject Categories:

  • Inorganic Chemistry
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE