Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING AND MANAGEMENT/DEPT OF ENGINEERING PHYSICS
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Recently, research on the wide bandgap semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and SiN implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.
- Inorganic Chemistry