Accession Number:

ADA411616

Title:

Layered 3-D RF Optoelectronic Microstructures with Precision Kinematic Interconnect

Descriptive Note:

Final rept. 3 Sep 2002-1 Feb 2003 Phase 1

Corporate Author:

MINNESOTA UNIV MINNEAPOLIS

Personal Author(s):

Report Date:

2003-02-20

Pagination or Media Count:

51.0

Abstract:

Report developed under STTR contract for topic ARMY02-T005. We have investigated the feasibility of using self-aligning kinematic optoelectronic mounts for active 3-D RFoptoelectronic microstructures. The mechanical interconnect features allow rapid and very precise assembly of multiple silicon layers into rigid structures with self-assembling electrical and thermal pathways. The major thrust of this Phase I investigation was to study these interconnects to determine their mechanical registration precision, heat removal capacity, and ability to couple high frequency RF electrical signals between the multiple layers. The results of our electrical simulations demonstrate that the electrical interconnect performance of these layered optoelectronic circuits should be excellent for designs up to at least 20 GHz using finite-ground coplanar waveguides. Solder columns, which are integral to the electrical interconnect structures between layers, are also excellent thermally conductive paths that allow the heat generated by RF circuitry to be removed. Passive placement of multimode fiber optic components should be possible based on our tests and modeling of the precision mechanical interconnects. These investigations indicate that layered, RF optoelectronic microstructures with precision mechanical interconnects should have excellent thermal, electrical and optical performance while benefiting from direct compatibility with existing planar RE devices and ease of manufacture.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE