Accession Number:

ADA411541

Title:

Optoelectronic Integrated Circuits Fabricated Using Atomic Layer Epitaxy

Descriptive Note:

Final technical rept. 15 Jun 1992-14 Jul 1995

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF CONTRACTS AND GRANTS

Personal Author(s):

Report Date:

1995-07-01

Pagination or Media Count:

133.0

Abstract:

Atomic Layer Epitaxy ALE is studied for use in the fabrication of optoelectronics integrated circuits, A new approach to ALE is investigated in which the process is performed under UHV conditions using organometallic compounds a sources for the reactive species. A vacuum ALE system was constructed and the mechanisms for growth of GaAs using trimethylgallium TMGa and tertiarybutylarsine TBAs were investigated using a set of in situ tools - reflection difference spectroscopy, mass spectroscopy, and reflection high energy electron diffraction. Studies of the interplay of total growth rate and background impurity Carbon incorporation were investigated. The growth rate was found to be limited by the exposure time required to insure complete removal of the CH3 species from the surface to reduce C incorporation. Selective area growth of GaAs on patterned substrates was undertaken to investigate the orientation dependences of the growth morphology on pattern direction.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Crystallography
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE