Accession Number:

ADA411053

Title:

Development of High-Sensitivity Nitride Solar-Blind Detectors and Detector Arrays Using Low-Dislocation-Density Nitride Surfaces

Descriptive Note:

Final rept. 1 Mar 1999-28 Feb 2002

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

2002-03-01

Pagination or Media Count:

62.0

Abstract:

This work explored the application of III-V nitride semiconductors for optical detectors in the ultraviolet UV region of the electromagnetic spectrum. Metalorganic vapor phase epitaxy was used to synthesize thin film p-i-n photodiode structures on double side polished sapphire substrates. These structures were fabricated into photodiode devices using generally accepted techniques for dry etching and p and n-contact metallizations. Test devices were characterized which demonstrated quantum efficiencies as high as 80. along with extremely low dark currents resulting in photodiode spectral detectivities as large as 610exp 13 cmHzexp 12W. Devices were designed and demonstrated for a series of detection regions ranging from 365 nm to 250 nm. Photodiode arrays were also fabricated and flip-chip bonded to silicon readout integrated circuits ROICs to form the basis of visible-blind and solar-blind UV digital cameras. These UV-specific digital arrays were tested using focal plane array hardware and software obtained from SE-IR, Inc.

Subject Categories:

  • Physical Chemistry
  • Optical Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE