Chemical Beam Epitaxy of Indium Nitride Using Seeded Supersonic Beams of Ammonia and Trimethyl-Indium
Final rept. Oct 2000-Jun 2002
NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF CHEMICAL ENGINEERING
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Low-temperature growth of indium nitride InN films on gallium nitrideOOO1 substrates was achieved by supersonic jet epitaxy using ammonia NH3 and trimethyl-indium TMIn. Unfortunately, there was no indication of a reaction pathway involving TM In and NH3 that results in InN growth at temperatures less than approximately 500C. We infer that NH3 decomposition is the rate-limiting step in InN growth using NH3 and elemental In or TM In. Highly selective generation of ground-state nitrogen atoms for growth was accomplished using a radio-frequency rf discharge supersonic jet source. The rf discharge supersonic jet source was charartized by optical emission spectroscopy and time-of-flight appearance potential mass spectrometry.
- Inorganic Chemistry