Accession Number:

ADA411024

Title:

Chemical Beam Epitaxy of Indium Nitride Using Seeded Supersonic Beams of Ammonia and Trimethyl-Indium

Descriptive Note:

Final rept. Oct 2000-Jun 2002

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF CHEMICAL ENGINEERING

Personal Author(s):

Report Date:

2002-06-01

Pagination or Media Count:

12.0

Abstract:

Low-temperature growth of indium nitride InN films on gallium nitrideOOO1 substrates was achieved by supersonic jet epitaxy using ammonia NH3 and trimethyl-indium TMIn. Unfortunately, there was no indication of a reaction pathway involving TM In and NH3 that results in InN growth at temperatures less than approximately 500C. We infer that NH3 decomposition is the rate-limiting step in InN growth using NH3 and elemental In or TM In. Highly selective generation of ground-state nitrogen atoms for growth was accomplished using a radio-frequency rf discharge supersonic jet source. The rf discharge supersonic jet source was charartized by optical emission spectroscopy and time-of-flight appearance potential mass spectrometry.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE