Accession Number:

ADA409276

Title:

Research and Development of Silicon Carbide (SiC) Junction Recovery Diodes for Picosecond Range, High Power Opening Switches

Descriptive Note:

Final rept. 1 Aug 2001-31 Jul 2002

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Personal Author(s):

Report Date:

2002-07-01

Pagination or Media Count:

44.0

Abstract:

This report results from a contract tasking Ioffe Institute as follows The purpose of the proposed project is to develop, fabricate, test, and characterize silicon carbide power semiconductor opening switches operating in the picosecond range of switch time. Special SiC diode structures will be fabricated and investigated, including Junction Recovery Diodes JRD. The operation of such diodes is founded on the superfast recovery of the junctions blocking ability after switching the device from forward to reverse bias conditions. Our estimations show that the parameters of JRD devices can be substantially improved in case of SiC devices, compared to both Si and GaAs capabilities. We expect i to increase the speed of switch operation, the specific commutated power, and the operation frequency repetition ii to reduce the weight and size of pulse devices and iii to achieve better reliability of the devices due to the unique thermal conductivity and radiation hardness of SiC.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE