Accession Number:

ADA402373

Title:

Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

Descriptive Note:

Corporate Author:

AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIRECTORATE

Report Date:

2002-03-01

Pagination or Media Count:

24.0

Abstract:

Three different passivation layers SiNx, MgO, and Sc2O3 were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaNGaN high electron mobility transistors HEMTs. The plasma-enhanced chemical vapor deposited SiNx produced 70 to 75 percent recovery of the drain-source current, independent of whether SIH4NH3 or SiD4ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recover of the current in GaN-cap HEMP structures and 80 to 90 percent recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months of aging.

Subject Categories:

  • Electrical and Electronic Equipment
  • Properties of Metals and Alloys

Distribution Statement:

APPROVED FOR PUBLIC RELEASE