Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIRECTORATE
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Three different passivation layers SiNx, MgO, and Sc2O3 were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaNGaN high electron mobility transistors HEMTs. The plasma-enhanced chemical vapor deposited SiNx produced 70 to 75 percent recovery of the drain-source current, independent of whether SIH4NH3 or SiD4ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recover of the current in GaN-cap HEMP structures and 80 to 90 percent recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months of aging.
- Electrical and Electronic Equipment
- Properties of Metals and Alloys