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Direct Deposition of Low Resistance Thermally Stable Ohmic Contacts to n-SiC
Final rept. May 2000-Nov 2001
ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD
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Ni2Si Ohmic contacts were fabricated via pulsed laser deposition on n-SiC. The contacts electrical, structural, compositional, and surface morphological properties were investigated as a function of annealing temperatures ranging from 700 to 950 deg C. The as-deposited and 700 deg C annealed contacts were non-Ohmic. Annealing at 950 deg C yielded excellent Ohmic behavior, an abrupt void-free interface, and a smooth surface morphology. No residual carbon was present within the contact metallization or at the contact-SiC interface, and the contact showed no appreciable thickness increase as a result of the annealing process. The results demonstrate that aside from maintaining the desirable electrical integrity associated with Ni and NiSi Ohmic contacts, the Ni2Si Ohmic contacts possessed improved interfacial, compositional, microstructural, and surface properties which are required for reliable high temperature and high power device operation.
APPROVED FOR PUBLIC RELEASE