Accession Number:

ADA399034

Title:

Deposition and Characterization of Barrier Metals

Descriptive Note:

Final rept. 9 Mar 1995-30 Apr 2001

Corporate Author:

AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIRECTORATE

Personal Author(s):

• Leedy, Kevin D.

Report Date:

2001-09-01

Pagination or Media Count:

34.0

Abstract:

Increasing complexity and shrinking sizes of integrated circuits necessitate the development of new materials and processes to meet current system requirements of high performance and reliability in smaller electronic assemblies. In order to achieve the system performance, materials with incompatible physical and electrical properties are often placed into direct contact with one another. Applications such as area array interconnection of Si devices using leadtin solders, vias in Si integrated circuits and gold contacts to GaAs circuits require the use of barrier metals to physically and chemically separate materials that would otherwise react and form undesirable by-products or significantly decrease the reliability of the electronic system. This effort was initiated in order to advance the understanding of basic mechanisms and influences of processing on the performance of barrier metals. Deposition of the barrier metals was conducted using physical vapor deposition, unique barrier metal alloys that could not be fabricated by thermodynamic equilibrium methods were developed. Characterization of the processing and materials was performed to better understand the essential mechanisms required for high quality barrier metals.

Descriptors:

• *THIN FILMS
• ELECTRONICS
• METALS
• ANNEALING
• X RAY DIFFRACTION
• VAPOR DEPOSITION
• INTEGRATED CIRCUITS
• NITROGEN
• BARRIERS
• TANTALUM

Subject Categories:

• Electrical and Electronic Equipment
• Properties of Metals and Alloys

Distribution Statement:

APPROVED FOR PUBLIC RELEASE