Accession Number:



DEPSCoR-98-High Temperature/High Speed Junction Devices and Contracts

Descriptive Note:

Final rept. 15 May 1998-14 May 2001

Corporate Author:


Report Date:


Pagination or Media Count:



The goal of the project was to take an interdisciplinary approach to the improvement of high temperature devices, with an emphasis on the fabrication and optimization of metal-semiconductor connections, junction field effect transistors and other heterojunction structures. We have focused on boron carbide and silicon carbide substrate materials and have made progress in the improvement of direct-write fabrication processes for the formation of metal connections and other heterojunctions. Accomplishments made in the boron carbide involve the development of protocols for fabrication of substrates and for doping with phosphorous and nickel. For silicon carbide CVD, we have demonstrated that carbonyl-containing organics lead to SiC formation, but have not been able to extend the materials growth past the sub-monolayer level at the time of this report. A major success has been the discovery of polymers, based on the vinylidene monomer, that can be directly photo-etched in a process useful to film resist lithography. Finally the metallocenes have been developed for CVD for a number of metals, eg., Fe, Ni, Co, Ru, under a variety of conditions. The metailocene-like PdEtasup 5-C5H5 Etasup 3-C3H5 has been shown to be a very effective source compound for the low temperature deposition of palladium.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement: