Accession Number:

ADA393850

Title:

The Electrochemical Oxidation of Barrier-Layer Metals

Descriptive Note:

Corporate Author:

JOINT INTELLIGENCE OBJECTIVES AGENCY WASHINGTON DC

Personal Author(s):

Report Date:

1964-10-07

Pagination or Media Count:

18.0

Abstract:

As it is well known, The oxide films which possess rectified conductivity in electrolytes are the barrier-layer metals. They include aluminum, tantalum, niobium, zirconium and certain other metals.. Silicon and certain semi metals possess analogous properties. Oxide films on aluminum have for a comparatively long time obtained wide application as dielectrics in electrolytic capacitors. Recently, a start has been made in using tantalum and niobium for these purposes Many attempts at the practical use of the barrier-layer properties of oxide films on aluminum and tantalum in electrolytic rectifiers were made in the early thirties. Now there is renewed interest in this question. The application of oxide films in dry capacitors also possesses significant interest , cryotrons , relays, and so forth. Oxide films on semiconductor materials allow the obtaining of good protection of the surface of semiconductor instruments from external influences.

Subject Categories:

  • Organic Chemistry
  • Metallurgy and Metallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE