Proof-of-Concept Proposal for the Thermal DIODE
Final rept. 26 Sep 2000-25 Mar 2001
ENECO INC SALT LAKE CITY UT
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According to initially submitted description of the proposed thermal diode for converting heat to electricity, proof of concept can be subdivided into the following three parts 1. Proving that a semiconductor emitting layer compares favorably in terms of carriers injection with metal emitters both in the thermoelectric or Schottky mode. 2. Verifying limits of diffusive transport in the semiconductor gap in terms of recombination at elevated temperatures. 3. Proving compensation layer capability of blocking thermoelectric back current from the collector. At this point, we have proved the compensation layer principle and that the recombination in lnSb at elevated temperatures does not pose a serious problem. We also proved that semiconductor layer improves efficiency by a factor of four for the same material compared to thermoelectric regime. So far, predictions of the Numerical model developed earlier are sound. We tested energy converters that yielded results competitive with any known thermoelectrics.
- Electrical and Electronic Equipment
- Non-electrical Energy Conversion
- Electricity and Magnetism