Advanced CAD System for Electromagnetic MEMS Interactive Analysis (ACADEMIA)
Final rept. Sep 1996-Oct 2000
STANFORD UNIV CA SCHOOL OF ENGINEERING
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Simulation and modeling of MEMS devices poses a three-fold challenge a difficulties in specifying accurate physical models that include process and material dependencies, b lack of fundamental materials parameters that impact behavior, and c adequate characterization of how the modeling relates final behavior of the devices. A multi-disciplinary team has addressed each of these areas, resulting in significant contributions in all of them. Based on detailed characterizations of a MEMS RF switch, used as a canonical benchmarking structure, accuracy as well as limitations of current CAD for MEMS has been quantified. A powerful set of algorithms have been developed for specifying MEMS structures, including extensible capabilities for simulation of processing conditions-especially changes resulting from etching and deposition. A new technique for tensile strength measurements of micro-beams has been developed and provides details of gram-scale effects that contribute to failure. FEM-compatible failure models have been developed using extensive data from aluminum beams. Finally, several new MEMS materials that are compatible with conventional CMOS backend processing have been explored. The use of sputtered silicon was tested in the context of circuits fabricated with MEMS structures. Other promising materials that have been investigated for MEMS applications include iridium, titanium-nitrate, titanium-tungsten, as well as aluminum.
- Computer Programming and Software
- Electromagnetic Pulses