Silicon Carbide Megawatt Power Devices for Combat Vehicles
Final technical rept. 16 Dec 1997-11 Jul 2001
GENERAL ELECTRIC CORPORATE RESEARCH ANDDEVELOPMENT SCHENECTADY NY
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This report documents the impact of the Megawatt Program on SiC power development. The executive summary section contains an extensive discussion of the program objectives, technical approach, technical challenges, development tasks, program accomplishments, transition and scientific results. This program has advanced the SiC power device technology on many fronts spanning from devices to applications. Specifically, high performance PiN diodes, GTOs, DIMOS and MGTs were designed, simulated and characterized manufacturable processes for PiN diodes and GTOs were developed their static and dynamic performance was evaluated Si and SiC hybrid half-bridge inverter modules were fabricated and novel application concepts for SiC power devices were formulated and analyzed. The knowledge accumulated under this program was shared with the sponsor and the DoD community at first and then published to accelerate the technology transition.
- Electric Power Production and Distribution
- Electric and Ion Propulsion
- Combat Vehicles