Terahertz Gain and Loss in Semiconductor Quantum Structures
Final rept. 15 May 1997-14 May 2000
CALIFORNIA UNIV SANTA BARBARA
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The terahertz part of the electromagnetic spectrum is technology poor. An examination of the underlying device physics associated with the technologies that border this part of the spectrum suggest that it marks a transition regime between transport electronics at the low frequency end microwave frequencies to quantum transition devices like lasers on the high frequency end infrared. Quantum transport devices, as the name implies embraces both transport physics and quantum transitions. The objectives of this research were to explore terahertz loss and gain in order to establish the principles for developing a solid-slate terahertz oscillator based on multi-quantum well superlattices. Key results were the following 1 Resonant photon assisted transport in semiconductor superlattices 2 Harmonic generation from electrically biased superlattices and 3 Measurements of terahertz loss and gain in electrically biased superlattices.
- Electrical and Electronic Equipment
- Solid State Physics