Accession Number:

ADA390574

Title:

Thermal Strain Induced Temperature Compensation of Diode Lasers

Descriptive Note:

Final technical rept. 15 Dec 1997-15 Dec 2000

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

2000-12-15

Pagination or Media Count:

22.0

Abstract:

We have explored both monolithic and hybrid assembly techniques, with miniaturization the main goal in either case. The hybrid approach that we will describe makes use of a submount of laser manufacturing, but made from a material chosen for a specific thermal expansion coefficient, either high or low compared to Inp, to obtain either enhanced or reduced temperature tuning. To increase the effectiveness of the differential expansion, we also developed a strain magnifying structure based on a deep crystallographic etch from the back of the substrate. One appeal of this hybrid technique is that the same basic technology can be applied to either tuning enhancement or reduction, by simply using a different submount. However, the ultimate in cost reduction and reliability would be obtained with a truly monolithic approach, and toward this end, we studied the properties of a high-expansion electroplated manganese film to serve as a stress inducing layer.

Subject Categories:

  • Lasers and Masers
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE