High-Quality LGS-Type Crystals and Films for Surface Acoustic Wave Applications
Final technical rept. Sep 1999-Aug 2000
INSTITUTE OF MICROELECTRONICS AND OPTOELECTRONICS LAUSANNE (SWITZERLAND)
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The aim of this project was to investigate the feasibility of liquid phase epitaxy LPE for the growth of high-quality langasite-type films for high-frequency RF resonator applications. The work done during this period included phase diagram studies, the search for a suitable solvent, systematic flux growth experiments of LGS, LGN and LGT, X-ray analysis of crystallized phases, preparation orientation, sawing, polishing, etching of LGS and LGT substrates from provided bulk Czochralski-grown crystals, top-seeded solution growth TSSG and LPE experiments. LPE films of LGS up to 1 x 1 sq cm could be grown on X- and Y-cut YZ, XZ in-plane axis, respectively LGS substrates for the first time. The clear tendency to stepfacet formation observed on Y-LGS films indicates that this plane at least may evoluate to the equilibrium facet, e.g. a perfectly oriented and flat surface, which is very interesting in view of SAW BAW applications.
- Line, Surface and Bulk Acoustic Wave Devices