Direct Integration of Ferroelectric LSCO/PNZT Capacitors on Si with Conducting Barrier Layers
Final rept. 1 Jun 1996-31 May 1999
MARYLAND UNIV COLLEGE PARK DEPT OF MATERIALS AND NUCLEAR ENGINEERING
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The students graduate and undergraduate who were funded by this program, participated in a comprehensive research program that is addressing the materials science issues relevant to the integration of ferroelectric perovskite thin films on silicon substrates for nonvolatile memory applications. These students collaborated with other students, postdocs and guest researchers funded by other sources both federal as well as industrial in a TEAM environment to address many of the complex issues and in parallel, leveraging the resources invested by the AASERT program. The AASERT funded students worked on two key aspects of the integration problem 1 growth of ferroelectric PZT and other derivatives thin films on poly-SiSi surfaces using conducting perovskite electrodes this problem was focused mainly on the materials science of conducting barrier layers and 2 reliability studies of the test capacitors fabricated on the aforementioned surfaces. The results of their collaborative efforts have been published in several international journals.
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