Accession Number:

ADA390017

Title:

High-Efficiency, Class-E RF Power Amplifiers

Descriptive Note:

Final rept. 1 Jun 97-31 Aug 2000

Corporate Author:

CALIFORNIA INST OF TECH PASADENA

Personal Author(s):

Report Date:

2001-04-30

Pagination or Media Count:

8.0

Abstract:

In this project, we developed several low-cost, high-efficiency RF power amplifiers. The final amplifier produced an output power of 1.1 kW, and was built with a pair of 4 MOSFETs in the style used for switching power supplies. The drain efficiency was 85 and the frequency was 7 MHz. This amplifier used a new switching amplifier class that we developed that combines the zero-voltage switching of Class E and the waveform control of Class F. We call the new class EF. This new class has also been applied to make a CMOS IC power amplifier that has an output of 2W at 2.4 GHz with an efficiency of 41.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE