High-Efficiency, Class-E RF Power Amplifiers
Final rept. 1 Jun 97-31 Aug 2000
CALIFORNIA INST OF TECH PASADENA
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In this project, we developed several low-cost, high-efficiency RF power amplifiers. The final amplifier produced an output power of 1.1 kW, and was built with a pair of 4 MOSFETs in the style used for switching power supplies. The drain efficiency was 85 and the frequency was 7 MHz. This amplifier used a new switching amplifier class that we developed that combines the zero-voltage switching of Class E and the waveform control of Class F. We call the new class EF. This new class has also been applied to make a CMOS IC power amplifier that has an output of 2W at 2.4 GHz with an efficiency of 41.
- Electrical and Electronic Equipment