Accession Number:

ADA386675

Title:

Construction, Characterization, and Use of an Arc-Heated Supersonic Free-Jet of Nitrogen Atoms for the Growth of GaN, AlN, and InN Thin Films

Descriptive Note:

Final rept.

Corporate Author:

ARIZONA STATE UNIV TEMPE DEPT OF PHYSICS

Personal Author(s):

Report Date:

2000-12-15

Pagination or Media Count:

39.0

Abstract:

Arc discharge and corona discharge supersonic free-jets are of interest as sources of activated nitrogen for molecular beam epitaxy MBE of nitride materials. Although the current objective is growth of III-V nitride semiconductors, these discharge sources are also very relevant to MBE of silicon-oxynitride gate dielectrics. Of interest in both applications is the relative ease and simplicity with which molecular species can be dissociated andor electronically excited in electrical discharges. Very high temperatures may be attained in an arc discharge, allowing even the strong 9.76 eV bond of the nitrogen molecule to be broken. If less power is required, as in non-dissociative electronic excitation, the lower power of the simpler corona discharge often suffices. By striking either type of discharge at the throat of a supersonic nozzle, a highly nonequilibrium distribution of dissociated andor excited species from can be frozen in in the ensuing supersonic expansion, providing an intense beam of dissociated nitrogen atoms andor excited nitrogen molecules. The exact spectrum of excited andor dissociated species is determined by the type and power of the discharge. Both arc and corona discharge free-jet sources were constructed and tested in this work. The arc discharge supersonic free-jets AD-SFJ yielded beams consisting of up to 80 N atoms 1x10 exp 18 atoms srs accompanied by undetermined amounts of excited atoms and molecules.

Subject Categories:

  • Physical Chemistry
  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE