Assembly of Ge Quantum-Dots on Silicon: Applications to Nanoelectronics
Final technical rept. 15 Jun 1996-14 Nov 1998
MICHIGAN TECHNOLOGICAL UNIV HOUGHTON
Pagination or Media Count:
There are four publications related to this project. They are. entitled as follows 1. Microstructural Development and Optical Properties of Epitaxial GE1-xCX Alloys on Si 100. 2. The Ge-C Local Mode in Epitaxial GeC and Ge-rich GeSiC Alloys. 3. Incorporation and Stability of Carbon During Low-Temperature Epitaxial Growth of Gel-xCx x less than 0.1 Alloys on Sil00 Microstructural and Raman Studies. 4. Low-temperature Epitaxial Growth of Ge-Si-C Alloys Microstructure, Raman Studies, and Optical Properties.
- Metallurgy and Metallography
- Atomic and Molecular Physics and Spectroscopy
- Quantum Theory and Relativity