Accession Number:

ADA386604

Title:

Assembly of Ge Quantum-Dots on Silicon: Applications to Nanoelectronics

Descriptive Note:

Final technical rept. 15 Jun 1996-14 Nov 1998

Corporate Author:

MICHIGAN TECHNOLOGICAL UNIV HOUGHTON

Personal Author(s):

Report Date:

2000-11-27

Pagination or Media Count:

24.0

Abstract:

There are four publications related to this project. They are. entitled as follows 1. Microstructural Development and Optical Properties of Epitaxial GE1-xCX Alloys on Si 100. 2. The Ge-C Local Mode in Epitaxial GeC and Ge-rich GeSiC Alloys. 3. Incorporation and Stability of Carbon During Low-Temperature Epitaxial Growth of Gel-xCx x less than 0.1 Alloys on Sil00 Microstructural and Raman Studies. 4. Low-temperature Epitaxial Growth of Ge-Si-C Alloys Microstructure, Raman Studies, and Optical Properties.

Subject Categories:

  • Metallurgy and Metallography
  • Atomic and Molecular Physics and Spectroscopy
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE