Three Dimensional Self-Assembled Electronic Nanostructures and Materials from Molecular Precursors
Final rept. Aug 1996-May 2000
PENNSYLVANIA STATE UNIV UNIVERSITY PARK
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This work developed chemical self-assembly methods for the fabrication of high dielectric oxide thin films and nanometer-scale electronic devices. The experimental emphasis was on preparation and testing of thin film dielectrics for memories, fabrication of single electron transistors, nucleationgrowth of colloidal crystals, template synthesis of metal nanowires, and synthesiscombinatorial selection of alloy nanocrystals for chemical sensor applications. The thin film assemblies were deposited chemically from building blocks with characteristic dimensions of nanometers to microns lamellar inorganic dielectrics, sol-gel metal oxide monolayers, polymer chains, colloidal metal and semiconductor particles, and nanowires. Thin films were grown by colloid adsorption, and by sol-gel processing of molecular precursors. Understanding and controlling self-assembly in these systems required theoretical development and computer simulations. Much of the theoretical effort was devoted to issues of simulation and visualization of particle self-assembly in one and two dimensions. Dynamical lattice gas models were developed, in order to model the assembly of mesoscopic particles. Two important successes of this project were 1 development of methods for making patterned, high dielectric thin film oxides by combining microcontact printing with inorganic self assembly, and 2 development of a combinatorial technique for identifying highly active alloy nanoparticle catalysts for amperometric sensors.
- Electrical and Electronic Equipment