Accession Number:

ADA386023

Title:

Uncompensated Garnet - A Magnetic Semiconductor

Descriptive Note:

Final rept. 3 Apr 1995-10 Apr 1998

Corporate Author:

OHIO STATE UNIV COLUMBUS DEPT OF PHYSICS

Personal Author(s):

Report Date:

1998-10-01

Pagination or Media Count:

19.0

Abstract:

Ca-substituted YIG single crystal films CaYIG show p-type conduction while Si or Ge doped YIG garnets SiYIG or GeYIG have n-type conduction. Both garnet films maintain their superior magnetic properties of pure YIG, while their electrical resistance approaches that of a semiconductor. Bilayers of SiCa doped YIG film were grown as a pn junction and found to have significant pn junction diode behavior. However, a voltage of 60 to 80 volts is required to observe a significant contribution to the asymmetry. The details of the I-V curves were also found to depend on the thickness of the CaYIG underlayer and the position of the contacts. In the CaYIG films a very sharp drop in the resistance was observed between 0 and - 5 G. At zero volts the resistivity was on the order of 1000 ohm.m and at - 5 G it is reduced to 2 ohm.m a surprising result. Since the conclusion of this work, a significant magneto resistance of a few percent has also been observed in the CaYIG films.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE