Accession Number:

ADA383863

Title:

MOCVD Upgrade

Descriptive Note:

Final technical rept. 1 Mar 1998-29 Feb 2000

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE CENTER FORHIGH TECHNOLOGY MATERIALS

Personal Author(s):

Report Date:

2000-09-21

Pagination or Media Count:

14.0

Abstract:

The goal of this research program is to develop a novel technology for the epitaxial growth and fabrication of vertical-cavity surface-emitting laser structures with lasing wavelengths in the 110 nm to 1500 nm regime, with special emphasis on the 1300 nm VCSELs and monolithic VCSEL arrays These are useful for the parallel optical data links that will interconnect future computer networks, whose nodes may be distributed across a wide range of distances and are interconnected by optical fibers. The use of 1300 nm VCSELs will provide improved fiber transmission performance as well as a more unified technology platform for the different levels of the interconnect hierarchy. The GalnNAsGaAs VCSEL technology represents a novel approach that is potentially manufacturable using conventional growth systems and device fabrication techniques.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE