Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency
Annual technical rept. 1 Aug 1999-30 Sep 2000
NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING
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The principal goal of the ongoing program is the enhancement of the functionality of silicon by expanding its field of use to include a higher frequency of operation via the integration of silicon-based IC circuits and GaN-based HFETs to produce variable gain amplifiers as the proof of concept of an electronic microsystem. This will be demonstrated by on-chip digital control of the gain of the GaN HFET device using a CMOS gate circuit. During this reporting period, NCSU and Nitronex have completed the construction and commissioning of two proprietary 100 mm III-Nitride MOVPE systems, developed a process route for the growth of GaN on Si111, demonstrated growth of GaN on 50-mm and 100-mm diameter Si111 substrates, and transferred in-house pendeo-epitaxy techniques developed from NCSU to Nitronex. Also during this reporting period, CTRI developed a wafer processing procedure, validated each process step and fabricated working devices on sapphire substrates. Transconductance of these devices is approximately 140 mSmm and the saturated drain to source current at zero gate bias is 700m Amm.
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