Accession Number:

ADA383300

Title:

Growth of Single Crystals and Fabrication of GaN and AlN Wafers

Descriptive Note:

Semiannual rept. 1 Jan-30 Jun 2000

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

2000-07-01

Pagination or Media Count:

14.0

Abstract:

GaN and AlN single crystals were grown from the vapor phase by evaporation of gallium or aluminum metals under an ammonia or nitrogen flow in a high temperature reactor. A growth rate of 500 micrometershr in the C direction was achieved for GaN while the growth rates for AlN were as high as a few millimeters per hour. The crystal size reached 3 mm for GaN and up to 15 mm for AlN. For both materials, the crystal aspect ratio ca could be controlled by temperature and partial pressure of reactants. The resulting crystals were transparent and of excellent crystalline quality, as confirmed by x-ray diffraction, Raman scattering, and transmission electron microscopy studies. Photoluminescence studies on GaN conducted at 77 K showed a sharp emission peak centered at 359 nm. Time dependent photoluminescence measurements revealed optical metastability in bulk GaN.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE