Accession Number:

ADA383248

Title:

Radiation Effects in Quantum Devices

Descriptive Note:

Final rept. 1 Jun 1996-31 May 2000

Corporate Author:

TEXAS UNIV AT ARLINGTON NANOFAB CENTER

Report Date:

2000-08-31

Pagination or Media Count:

43.0

Abstract:

Experiments were performed to determine the effect of radiation on quantum devices. The devices included resonant tunneling devices and two-dimensional electron gas devices. None of the devices were radiation-hardened prior to testing. The radiation used in the tests included gamma rays, protons, neutrons, and heavy ions. Resonant tunneling devices were found to possess significant radiation tolerance. None of these devices showed any systematic effects as a result of irradiation up to 1 Mrad of gamma rays, 3.5x10exp 11 protonscm2 at 55 MeV, 5x10exp 10 neutronscm2 with energies from 1.5 to 800 MeV, and to 1x10exp 7 Kr ionscm2 with an LET 35 MeV-cm2mg. Two-dimensional electron gas devices, including quantum transistors and MODFET structures, were irradiated by gammas to 50 krad, protons to 5x10exp 10 protonscm2, and neutrons to 3x10exp 10 neutronscm2. These devices displayed transient effects due to gamma and proton irradiation. Gamma irradiation produced a depression of the device current that recovered completely over periods of hours. Proton bombardment produced an enhancement of the device currents that did not anneal completely over similar periods. Neutron irradiation produced no effects on the devices. Taken as a whole, these results indicate that quantum devices represent a prime candidate for application in radiation-harsh environments.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electromagnetic Shielding

Distribution Statement:

APPROVED FOR PUBLIC RELEASE