Accession Number:

ADA383192

Title:

InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

Descriptive Note:

Interim 6 month rept. 22 Mar-22 Sep 2000

Corporate Author:

ESSENTIAL RESEARCH INC CLEVELAND OH

Personal Author(s):

Report Date:

2000-10-12

Pagination or Media Count:

7.0

Abstract:

The passivating front and back window layer of the top cell has been chosen. We have chosen to use InGaAs as the tunnel junction interconnect compound since it is easily degenerately doped. All of the dual junction cell structures were grown on GaAs substrates. Time constraints prevented us from completing the development of the GaAs-on-Ge growth process. Analysis of the I-V and EQE data, and comparison with computer-modeled data, shows that the performance of the dual-junction cell is still being controlled by the bottom cell, in spite of top cell thinning. Further improvement in the dual-junction cell efficiency is possible by thinning the front window.

Subject Categories:

  • Non-electrical Energy Conversion

Distribution Statement:

APPROVED FOR PUBLIC RELEASE