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High Power III-V Mid-Infrared Lasers for the Spectral Range of 3-3.6 Microns
RUSSIAN ACADEMY OF SCIENCES ST PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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This report results from a contract tasking SEC for Microelectronics of Ioffe Physico-Technical Institute as follows The contractor will investigate high power mid-IR lasers based on III-V semiconductor heterostructures. Such lasers based on type I and II InAsSbInGaAsSb. GaInAsSbInGaAsSb double heterostructures and also novel lasers with asymmetric band offset confinement will be fabricated and studied both theoretically and experimentally. Three samples of the type II lasers and three samples of the LED2 structures will be delivered at the end of the contract.
APPROVED FOR PUBLIC RELEASE