Accession Number:

ADA379926

Title:

High Power III-V Mid-Infrared Lasers for the Spectral Range of 3-3.6 Microns

Descriptive Note:

Final rept.

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES ST PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Personal Author(s):

• Yakovlev, Yury

Report Date:

2000-01-01

Pagination or Media Count:

48.0

Abstract:

This report results from a contract tasking SEC for Microelectronics of Ioffe Physico-Technical Institute as follows The contractor will investigate high power mid-IR lasers based on III-V semiconductor heterostructures. Such lasers based on type I and II InAsSbInGaAsSb. GaInAsSbInGaAsSb double heterostructures and also novel lasers with asymmetric band offset confinement will be fabricated and studied both theoretically and experimentally. Three samples of the type II lasers and three samples of the LED2 structures will be delivered at the end of the contract.

Descriptors:

• *INFRARED LASERS
• *INTERMEDIATE INFRARED RADIATION
• HIGH POWER
• SEMICONDUCTOR DEVICES
• MICROELECTRONICS
• SAMPLING
• RUSSIA
• INFRARED SPECTRA

Subject Categories:

• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE