Accession Number:

ADA379743

Title:

(AASERT 95) Quantum Dot Devices and Optoelectronic Device Characterization

Descriptive Note:

Final rept. 1 Jun 1995-31 May 1998

Corporate Author:

ARIZONA UNIV TUCSON

Personal Author(s):

• Peyghambarian, Nasser

Report Date:

1998-05-31

Pagination or Media Count:

8.0

Abstract:

We reported evidence of quasi-continuous optical gain in CdS quantum dots QDs fabricated by the sol gel process and embedded in glass. The gain spectra were obtained using the pump and probe technique and nanosecond quasi resonant excitation at 11 K. The dots were in the intermediate quantum-confirement regime and the concentration of CdS is relatively high. The gain, which is spectrally broad, develops on the low energy side of the absorption band edge. The reason why the gain, which originates from the recombination of several excited levels between two and one electron-hole pairs states i.e., biexciton to exciton. The maximum measured gain reaches 200 cm at 11 K and 17cm at 170 K.

Descriptors:

• *ELECTROOPTICS
• *QUANTUM DOTS
• CADMIUM SULFIDES
• SOL GEL PROCESSES

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE