Accession Number:

ADA379355

Title:

Silicon Carbide and Related Materials - 1999, Part 1

Descriptive Note:

Conference proceedings

Corporate Author:

DEPARTMENT OF DEFENSE WASHINGTON DC

Personal Author(s):

• Carter, Calvin H., Jr.
• Devaty, Robert P.
• Rohrer, Gregory S.

Report Date:

1999-10-01

Pagination or Media Count:

891.0

Abstract:

These volumes contain written versions of papers which were presented at the International Conference on Silicon Carbide and Related Materials 1999 ICSCRM99, held October 10-15, 1999 in Research Triangle Park, North Carolina. Over 650 participants from 25 countries attended the conference. This attendance was the highest in the conference series to date. This record attendance and the large number of papers submitted attest to the rapidly increasing interest in wide bandgap semiconductors in both academic and industrial communities. Contained in the two volumes of these proceeding are 401 papers, 19 of which were invited. They document our present understanding of the many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical approaches,-- materials characterization, device processing and design, fabrication and characterization of electronic and optoelectronic devices, some with outstanding performance.

Descriptors:

• *SYMPOSIA
• *ELECTROOPTICS
• *SEMICONDUCTOR DEVICES
• EPITAXIAL GROWTH
• NITRIDES
• BROADBAND
• GROUP III COMPOUNDS
• DOPING
• SILICON CARBIDES
• POLISHING
• MICROMACHINING

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE