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Multilayer Magnetic Material Structures for Ultrahigh Frequency Integrated Devices
Final rept. 11 Aug 1996-31 Dec 1999
CALIFORNIA UNIV IRVINE DEPT OF PHYSICSAND ASTRONOMY
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This final report summarizes the advances and developments associated with the ultra-high microwave device program at the University of California, Irvine. The program was a collaborative effort of researchers in the Department of Physics and Astronomy, and the Department of Electrical and Computer Engineering. We developed the means of fabricating and characterizing state of the art M3E grown semiconductingferromagnetic Fe hybrid structures. Chemical etching methods allowed us to create device structures, with microstrips of ferromagnetic Fe on the GaAs substrates. The coupling between microwaves propagating in the GaAs, and spin excitations in the Fe microstrip were measured and quantified. A high frequency notch filter was devised, which operated up to 32.5 GHz. Our theoretical effort developed quantitative theories of idealized device structures.
APPROVED FOR PUBLIC RELEASE