Accession Number:

ADA379004

Title:

Gallium Nitride Static Induction Power Transistors

Descriptive Note:

Final technical rept. 1 Mar 1999-31 Mar 2000

Corporate Author:

BOSTON UNIV MA DEPT OF COMPUTER SCIENCE

Personal Author(s):

• Eddy, Charles R., Jr.
• Moustakas, Theodore D.

Report Date:

2000-06-30

Pagination or Media Count:

21.0

Abstract:

This report summarizes a one year program to investigate issues related to fabrication and performance of III-V nitride static induction power transistors. To understand vertical conduction mechanisms in this device a nearly ideal, vertical Schottky barrier diode was fabricated and analyzed. By applying the diffusion theory of Schottky barriers, a vertical mobility of 950 sq cmVs was measured which, when compared to a lateral mobility in the same film of 160 sq cmVs, indicates a minimal role of dislocations in scattering electrons in the vertical direction. In an effort to develop the required processing for a GaN static induction transistor, high density plasma etching was optimized for fabricating the recessed gate structure. The effect of such processing on ohmic contact quality was examined as a first step to understanding such surfaces. It was found that even etches with very low ion energies degraded the contacts and that the damage could be recovered with a short 30 sec rapid thermal anneal at 700 C.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *GALLIUM NITRIDES
• THERMAL PROPERTIES
• DIODES
• IONS
• SCATTERING
• ANNEALING
• CONDUCTIVITY
• PLASMAS(PHYSICS)
• GATES(CIRCUITS)
• ETCHING
• ELECTRONS
• DISLOCATIONS
• LOW ENERGY
• HIGH DENSITY
• SCHOTTKY BARRIER DEVICES
• ELECTRIC CONTACTS
• DIFFUSION THEORY

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE