Dielectric Properties of PMN-PZ-PT System
Final rept. 12 Aug 1999-25 Feb 2000
YONSEI UNIV SEOUL (REPUBLIC OF KOREA) DEPT OF CERAMIC ENGINEERING
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Recently, there has been considerable scientific and technological interest in ferroelectric thin films for numerous potential applications that utilize their dielectric, piezoelectric, pyroelectric and electro-optic properties. Among them, lead zirconate titanate PZT and PZT-PbMg13Nb23O3 systems at compositions near their morphotrophic phase boundaries, have been investigated because of their excellent piezoelectric and dielectric properties for actuator and semiconducting memory devices. In this study, ferroelectric thin films with 0.1PbMg13Nb23O3-0.9PbZrxTi1-xO3 0.3 x 0.9 composition have been prepared by chemical solution deposition with corresponding metal alkoxides partially stabilized with triethanolamine and acetylacetone. 0.1PbMg13Nb23O3-0.9PbZrxTi1-xO3 thin films were deposited on Pt-coated substrate by spin-coating and crystallized at 700 deg C in air. And then their dielectric properties were investigated.
- Industrial Chemistry and Chemical Processing
- Ceramics, Refractories and Glass
- Electricity and Magnetism