Accession Number:

ADA374611

Title:

Growth and Fabrication of GaN-Based Heterojunction Biopolar Transistors

Descriptive Note:

Annual progress rept. no. 2, Jan 1999-2000

Corporate Author:

GEORGIA INST OF TECH ATLANTA OFFICE OFSPONSORED RESEARCH

Personal Author(s):

Report Date:

2000-03-06

Pagination or Media Count:

10.0

Abstract:

In this progress report, we summarize the results to date of experiments to prove the existence of a two dimensional hole gas. If possible, this hole gas will result in enhanced performance Heterojunctions bipolar transistors for military and commercial applications. Also summarized is the background work required to achieve the two dimensional hole gas including several never before reported results on the behavior of p-type dopants in III-Nitrides.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE