Accelerated Program Development of High-Quality, Large-Area GaN and AlGaN Substrates
Final rept. 1 May 96-31 Dec 98
NORTH CAROLINA STATE UNIV AT RALEIGH
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The purpose of this work was to explore growth of thick layers of GaN, AlN, and AlGaN for use as substrates in III-N device epitaxy using sublimation vapor phase epitaxy SVPE. The SVPE system was a vertical, cold-wall, pancake-style reactor similar in design to a MOCVD reactor. Ammonia was used as a nitrogen source, while the group III precursors were gallium chloride, GaCl3, and aluminum chloride, AlCl3. All growths were performed on sapphire substrates with approx. 1 micrometer GaN buffer layers prepared by MOCVD.
- Electrical and Electronic Equipment