Accession Number:

ADA371383

Title:

Accelerated Program Development of High-Quality, Large-Area GaN and AlGaN Substrates

Descriptive Note:

Final rept. 1 May 96-31 Dec 98

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

1999-08-12

Pagination or Media Count:

56.0

Abstract:

The purpose of this work was to explore growth of thick layers of GaN, AlN, and AlGaN for use as substrates in III-N device epitaxy using sublimation vapor phase epitaxy SVPE. The SVPE system was a vertical, cold-wall, pancake-style reactor similar in design to a MOCVD reactor. Ammonia was used as a nitrogen source, while the group III precursors were gallium chloride, GaCl3, and aluminum chloride, AlCl3. All growths were performed on sapphire substrates with approx. 1 micrometer GaN buffer layers prepared by MOCVD.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE